VBGM1252N Description
VBGM1252N N-Channel 250 V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) () MAX. 250 0.016at VGS = 10 V ID (A) 80 Qg (TYP.) 68nC.
VBGM1252N Key Features
- SGT technology Power MOSFET
- 100 % Rg and UIS tested
- Maximum 150°C junction temperature