VBGPB1252N Description
VBGPB1252N N-Channel 250 V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) () MAX. 250 0.016at VGS = 10 V ID (A) 100 Qg (TYP.) 70nC.
VBGPB1252N Key Features
- SGT technology Power MOSFET
- 100 % Rg and UIS tested
- Maximum 150 °C junction temperature