VBGQT1801 Description
VBGQT1801 N-Channel 80 V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) () MAX. 80 0.001at VGS = 10 V ID (A) 350 Qg (TYP.) 80.
VBGQT1801 Key Features
- SGT technology Power MOSFET
- Maximum 150 °C junction temperature
- 100 % Rg and UIS tested