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VBJ17R04SE - N-Channel MOSFET

Key Features

  • Low figure-of-merit (FOM) Ron x Qg.
  • Low input capacitance (Ciss).
  • Reduced switching and conduction losses.
  • Ultra low gate charge (Qg).
  • Avalanche energy rated (UIS).

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Full PDF Text Transcription for VBJ17R04SE (Reference)

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VBJ17R04SE www.VBsemi.com N-Channel 700V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) 700 VGS = 10 V 1....

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t TJ max. RDS(on) at 25 °C (Ω) 700 VGS = 10 V 1.