• Part: VBK362K
  • Description: Dual N-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: VBsemi
  • Size: 249.59 KB
Download VBK362K Datasheet PDF
VBsemi
VBK362K
VBK362K is Dual N-Channel MOSFET manufactured by VBsemi.
FEATURES - Halogen-free According to IEC 61249-2-21 Definition - Low On-Resistance:2.5 Ω - Low Threshold: 2 V (typ.) - Low Input Capacitance: 25 p F - Fast Switching Speed: 25 ns - Low Input and Output Leakage - Trench FET® Power MOSFET - pliant to Ro HS Directive 2002/95/EC BENEFITS - Low Offset Voltage - Low-Voltage Operation - Easily Driven Without Buffer - High-Speed Circuits - Low Error Voltage APPLICATIONS - Direct Logic-Level Interface: TTL/CMOS - Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc. - Battery Operated Systems - Solid-State Relays S1 S2 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)b Pulsed Drain Currenta Power Dissipationb Maximum Junction-to-Ambientb Operating Junction and Storage Temperature Range TA = 25 °C TA = 100 °C TA = 25 °C TA = 100 °C VDS VGS IDM PD Rth JA TJ, Tstg Notes: a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 board. Limit 60 ± 20 300 190 800 0.35 0.14 350 - 55 to 150 Unit V m A W...