VBK362K - Dual N-Channel MOSFET

VBsemi

Key Features

Halogen-free According to IEC 61249-2-21 Definition.
Low On-Resistance:2.5 Ω.
Low Threshold: 2 V (typ. ).
Low Input Capacitance: 25 pF.
Fast Switching Speed: 25 ns.
Low Input and Output Leakage.
TrenchFET® Power MOSFET.
Compliant to RoHS Directive 2002/95/EC.

VBK362K dual n-channel mosfet by VBsemi - Datasheet Preview

Datasheet Details

Part number	VBK362K
Manufacturer	VBsemi
File Size	249.59 KB
Description	Dual N-Channel MOSFET
Datasheet	VBK362K Datasheet

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VBK362K Dual N-Channel 60 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 2.5 at VGS = 10 V ID (mA) 300 SOT-363 SC-70 S1 1 6 D1 G1 2 5 G2 D2 3 4 S2 Top View D1 D2 G1 G2 FEATURES • Halogen-free According to IEC 61249-2-21 Definition •Low On-Resistance:2.5 Ω • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF • Fast Switching Speed: 25 ns • Low Input and Output Leakage • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC BENEFITS • Low Offset Voltage • Low-Voltage Operation • Easily Driven Without Buffer • High-Speed Circuits • Low Error Voltage APPLICATIONS • Direct Logic-Level Interface: TTL/CMOS • Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc.