VBsemi Electronics VBK362K
Dual N-Channel MOSFET
| Part No. | VBK362K |
|---|---|
| Datasheet | VBK362K Download |
| Manufacturer | VBsemi Electronics |
| Description | Dual N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Halogen-free According to IEC 61249-2-21 Definition●Low On-Resistance:2.5 Ω
● Low Threshold: 2 V (typ.)
● Low Input Capacitance: 25 pF
● Fast Switching Speed: 25 ns
● Low Input and Output Leakage
● TrenchFET® Power MOSFET
● Compliant to RoHS Directive 2002/95/EC BENEFITS
● Low Offset Voltage
● Low-Voltage Operation
● Easily Driven Without Buffer
● High-Speed Circuits
● Low Error Voltage
APPLICATIONS
● Direct Logic-Level Interface: TTL/CMOS● Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc.
● Battery Operated Systems
● Solid-State Relays S1 S2
ABSOLUTE MAXIMUM RATINGS
TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)b Pulsed Drain Currenta Power Dissipationb Maximum Junction-to-Ambientb Operating Junction and Storage Temperature Range TA = 25 °C TA = 100 °C TA = 25 °C TA = 100 °C VDS VGS ID IDM PD RthJA TJ, Tstg Notes: a. Pulse width limited by maximum junction temperature. b.
