VBL2101N Description
VBL2101N P-Channel 100 V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) () Max. -100 0.011 at VGS = - 10 V 0.013 at VGS = - 4.5 V ID (A) - 100 - 95 Qg (Typ.) 60 D2PAK (TO-263) S.
VBL2101N Key Features
- Halogen-free According to IEC 61249-2-21
- TrenchFET® Power MOSFET
- 100 % Rg and UIS Tested
- pliant to RoHS Directive 2002/95/EC