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VBM1104S - N-Channel MOSFET

Features

  • Super Trench technology Power MOSFET.
  • Excellent gate charge x Rds (on) product(FOM).
  • Very low on-resfistance Rds (on).
  • 100 % Rg and UIS Tested.

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Datasheet Details

Part number VBM1104S
Manufacturer VBsemi
File Size 268.03 KB
Description N-Channel MOSFET
Datasheet download datasheet VBM1104S Datasheet
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Full PDF Text Transcription

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VBM1104S www.VBsemi.com N-Channel 100-V (D-S) Super Trench Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V ID (A) a Configuration TO-220 100 0.0036 180 Single FEATURES • Super Trench technology Power MOSFET • Excellent gate charge x Rds (on) product(FOM) • Very low on-resfistance Rds (on) • 100 % Rg and UIS Tested APPLICATIONS • Isolated DC/DC Converters D Top View GD S G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °Ca TC = 125 °C ID Continuous Source Current (Diode Conduction)a IS Pulsed Drain Currentb IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.
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