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VBM1201K - N-Channel MOSFET

Features

  • TrenchFET® Power MOSFET.
  • 175 °C Junction Temperature.
  • PWM Optimized.
  • 100 % Rg Tested.
  • Compliant to RoHS Directive 2002/95/EC.

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Datasheet preview – VBM1201K

Datasheet Details

Part number VBM1201K
Manufacturer VBsemi
File Size 835.96 KB
Description N-Channel MOSFET
Datasheet download datasheet VBM1201K Datasheet
Additional preview pages of the VBM1201K datasheet.

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Full PDF Text Transcription

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VBM1201K N-Channel 200 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 200 VGS = 10 V 13 3.0 7.9 Single 0.
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