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VBM1307
N-Channel 30 V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration Package
TO-220AB
30 0.007 0.010
70 Single TO-220AB
FEATURES • TrenchFET® power MOSFET • Package with low thermal resistance • 100 % Rg and UIS tested
D
G
GD S Top View
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current Continuous Source Current (Diode Conduction) a
TC = 25 °C a TC = 125 °C
Pulsed Drain Current b
Single Pulse Avalanche Current Single Pulse Avalanche Energy
L = 0.
VBM1307 Datasheet
