Datasheet4U Logo Datasheet4U.com

VBM165R02S - N-Channel MOSFET

📥 Download Datasheet

Overview

VBM165R02S / VBMB165R02S VBE165R02S / VBFB165R02S www.VBsemi.com /$IBOOFM657 %4 4VQFS+VODUJPOPower MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 650 VGS = 10 V 2.3 Qg (Max.) (nC) 31 Qgs (nC) 4.

Key Features

  • Isolated Package.
  • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz).
  • Sink to Lead Creepage Distance = 4.8 mm.
  • Dynamic dV/dt Rating.
  • Low Thermal Resistance.
  • Lead (Pb)-free Available Available RoHS.

More Datasheets from VBsemi

Part Number Description
VBM165R10S N-Channel Power MOSFET
VBM165R18 N-Channel MOSFET
VBM165R22 N-Channel MOSFET
VBM1603 N-Channel MOSFET
VBM1606 N-Channel MOSFET
VBM1680 N-Channel MOSFET
VBM16R02S N-Channel MOSFET
VBM16R07S N-Channel MOSFET
VBM16R08 N-Channel MOSFET
VBM16R12 N-Channel MOSFET