VBM165R18 Description
VBM165R18 N-Channel 650 V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) (Ω) at 25 °C Qg max.
VBM165R18 Key Features
- Reduced trr, Qrr, and IRRM
- Low figure-of-merit (FOM) Ron x Qg
- Low input capacitance (Ciss)
- Low switching losses due to reduced Qrr
- Ultra low gate charge (Qg)
- Avalanche energy rated (UIS)