VBM165R22 - N-Channel MOSFET

VBsemi

Datasheet Details

VBM165R22 www.VBsemi.com N-Channel 650 V (D-S) Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max.

RDS(on) at 25 °C () Qg max.

(nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 98 13 22 Single 0.

Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness - Avalanche Energy Rated (UIS).
Optimal Efficiency and Operation - Low Cost - Simple Gate Drive Circuitry - Low Figure-Of-Merit (FOM): Ron x Qg - Fast Switching.