VBM165R22 Description
N-Channel 650 V (D-S) Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 98 13 22 Single 0.280 TO-220AB D GD S Top View G S N-Channel MOSFET.
VBM165R22 Key Features
- Optimal Design
- Low Area Specific On-Resistance
- Low Input Capacitance (Ciss)
- Reduced Capacitive Switching Losses
- High Body Diode Ruggedness
- Avalanche Energy Rated (UIS)
- Optimal Efficiency and Operation
- Low Cost
- Simple Gate Drive Circuitry
- Low Figure-Of-Merit (FOM): Ron x Qg