VBM16R08 Description
VBM16R08 /$IBOOFM07 %4 Power MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 600 VGS = 10 V 49 13 20 Single 0.780.
VBM16R08 Key Features
- Low gate charge Qg results in simple drive requirement
- Improved gate, avalanche and dynamic dV/dt ruggedness
- Fully characterized capacitance and avalanche voltage and current