VBM1803 Description
N-Channel 80 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) MAX. 80 0.0028 at VGS = 10 V 0.0030 at VGS = 7.5 V ID (A) 195 185 TO-220AB Qg (TYP.).
VBM1803 Key Features
- TrenchFET® power MOSFET
- Maximum 175 °C junction temperature
- Very low Qgd reduces power loss from passing through Vplateau
- 100 % Rg and UIS tested