VBM2102M Description
VBM2102M P-Channel 100 V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY VDS RDS(on) VGS = 10 V RDS(on) VGS = 4.5 V ID Configuration -100 V 167 mΩ 178 mΩ -18 A Single TO-220AB.
VBM2102M Key Features
- Halogen-free According to IEC 61249-2-21
- TrenchFET® Power MOSFET
- 100 % Rg and UIS Tested
- pliant to RoHS Directive 2002/95/EC