VBM2157N Description
VBM2157N P-Channel 150 V (D-S) 175 °C MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = - 10 V RDS(on) () at VGS = - 4.5 V ID (A) Configuration - 150 0.065 0.070 - 40 Single.
VBM2157N Key Features
- Halogen-free According to IEC 61249-2-21 Definition
- TrenchFET® Power MOSFET
- Package with Low Thermal Resistance
- 100 % Rg and UIS Tested
- pliant to RoHS Directive 2002/95/EC