VBM2611 Description
VBM2611 P-Channel 60V (D-S) 175 °C MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) () - 60 0.012 at VGS = - 10 V 0.015 at VGS = - 4.5 V TO-220AB ID (A)c -80 -50.
VBM2611 Key Features
- TrenchFET® Power MOSFET
- pliant to RoHS Directive 2002/95/EC