VBMB15R11S Description
VBM15R11S / VBMB15R11S / VBP15R11S .VBsemi. N-Channel 500V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max.
VBMB15R11S Key Features
- Low figure-of-merit (FOM) Ron x Qg
- Low input capacitance (Ciss)
- Reduced switching and conduction losses
- Low gate charge (Qg)
- Avalanche energy rated (UIS)