Datasheet4U Logo Datasheet4U.com

VBMB165R22 - N-Channel MOSFET

📥 Download Datasheet

Overview

VBMB165R22 N-Channel 650 V (D-S) Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max.

RDS(on) at 25 °C () Qg max.

(nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 98 13 22 Single 0.

Key Features

  • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness - Avalanche Energy Rated (UIS).
  • Optimal Efficiency and Operation - Low Cost - Simple Gate Drive Circuitry - Low Figure-Of-Merit (FOM): Ron x Qg - Fast Switching.

More Datasheets from VBsemi

Part Number Description
VBMB165R02 N-Channel MOSFET
VBMB165R02S N-Channel MOSFET
VBMB165R10S N-Channel Power MOSFET
VBMB165R16 N-Channel MOSFET
VBMB1606 N-Channel MOSFET
VBMB1607V1.6 N-Channel MOSFET
VBMB1607V3 N-Channel MOSFET
VBMB16I15 600V Trench and Fieldstop IGBT
VBMB16R02S N-Channel MOSFET
VBMB16R07S N-Channel MOSFET