VBMB165R22
Key Features
- Optimal Design
- Low Area Specific On-Resistance
- Low Input Capacitance (Ciss)
- Reduced Capacitive Switching Losses
- High Body Diode Ruggedness
- Avalanche Energy Rated (UIS)
- Optimal Efficiency and Operation
- Simple Gate Drive Circuitry
- Low Figure-Of-Merit (FOM): Ron x Qg
- Fast Switching
