VBMB165R22 - N-Channel MOSFET

Features

Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness - Avalanche Energy Rated (UIS).
Optimal Efficiency and Operation - Low Cost - Simple Gate Drive Circuitry - Low Figure-Of-Merit (FOM): Ron x Qg - Fast Switching.

VBsemi

Datasheet Details

Part number	VBMB165R22
Manufacturer	VBsemi
File Size	261.00 KB
Description	N-Channel MOSFET
Datasheet	VBMB165R22 Datasheet
Additional preview pages of the VBMB165R22 datasheet.

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Full PDF Text Transcription

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VBMB165R22 N-Channel 650 V (D-S) Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 98 13 22 Single 0.

Published: Oct 14, 2024 |