VBMB16R07S Overview
VBM16R07S / VBMB16R07S VBE16R07S / VBFB16R07S .VBsemi. /$IBOOFM07 %4 4VQFS+VODUJPOPower MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max.
VBMB16R07S Key Features
- Low figure-of-merit (FOM) Ron x Qg
- Low input capacitance (Ciss)
- Reduced switching and conduction losses
- Ultra low gate charge (Qg)
- Avalanche energy rated (UIS)