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VBMB16R07S - N-Channel MOSFET

Download the VBMB16R07S datasheet PDF. This datasheet also includes the VBM16R07S variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (VBM16R07S-VBsemi.pdf) that lists specifications for multiple related part numbers.

Overview

VBM16R07S / VBMB16R07S VBE16R07S / VBFB16R07S www.VBsemi.com /$IBOOFM07 %4 4VQFS+VODUJPOPower MOSFET PRODUCT SUMMARY VDS (V) at TJ max.

RDS(on) at 25 °C (Ω) Qg max.

(nC) Qgs (nC) Qgd (nC) Configuration 00 VGS = 10 V    Single 0.

Key Features

  • Low figure-of-merit (FOM) Ron x Qg.
  • Low input capacitance (Ciss).
  • Reduced switching and conduction losses.
  • Ultra low gate charge (Qg).
  • Avalanche energy rated (UIS).

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