VBsemi Electronics VBMB16R20
N-Channel MOSFET
| Part No. | VBMB16R20 |
|---|---|
| Datasheet | VBMB16R20 Download |
| Manufacturer | VBsemi Electronics |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Reduced trr, Qrr, and IRRM● Low figure-of-merit (FOM) Ron x Qg
● Low input capacitance (Ciss)
● Low switching losses due to reduced Qrr
● Ultra low gate charge (Qg)
● Avalanche energy rated (UIS)
APPLICATIONS
● Telecommunications - Server and telecom power supplies● Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting
● Consumer and computing - ATX power supplies
● Industrial - Welding - Battery chargers
● Renewable energy - Solar (PV inverters)
● Switch mode power supplies (SMPS) D TO-247AC GD S Top View VBM16R20 GDS Top View VBMB16R20 S D G Top View VBP16R20
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current a Linear Derating Factor VDS VGS VGS at 10 V TC = 25 °C TC = 100 °C ID IDM Single Pulse Avalanche Energy b Maximum Power Dissipation Operating Junction and Storage Temperature Range Drain-Source Voltage Slope Reverse Diode dV/dt d TJ = 125 °C EAS PD TJ, Tstg dV/dt Soldering Recommendations (Peak Temperature) c for 10 s Notes a.
