VBMB19R10S - N-Channel Power MOSFET

This page provides the datasheet information for the VBMB19R10S, a member of the VBM19R10S N-Channel Power MOSFET family.

Features

Low figure-of-merit (FOM) Ron x Qg.
Low input capacitance (Ciss).
Reduced switching and conduction losses.
Ultra low gate charge (Qg).
Avalanche energy rated (UIS).

VBsemi

📥 Download Datasheet

Datasheet Details

Part number	VBMB19R10S
Manufacturer	VBsemi
File Size	362.12 KB
Description	N-Channel Power MOSFET
Datasheet	VBMB19R10S Datasheet
Additional preview pages of the VBMB19R10S datasheet.

📁 Similar Datasheet

VBM-360 - AC-DC POWER SUPPLY (CUI)

Other Datasheets by VBsemi

VBMB1401 - N-Channel MOSFET
VBMB14R04 - Power MOSFET
VBMB15R11S - N-Channel Power MOSFET
VBMB15R15S - N-Channel MOSFET
VBMB15R20S - N-Channel Power MOSFET
VBMB1606 - N-Channel MOSFET
VBMB1607V1.6 - N-Channel MOSFET
VBMB1607V3 - N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text

VBM19R10S / VBMB19R10S / VBP19R10S www.VBsemi.com N-Channel 900V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 900 VGS = 10 V 65 7 15 Single 0.

Published: Dec 22, 2024 |