VBN1204N
FEATURES
- Trench FET® Power MOSFETS
- 175 °C Junction Temperature
- 100 % Rg and UIS Tested APPLICATIONS
- Power Supply
- Lighting Systems
Ro HS
PLIANT
SS D G
Top View
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 175 °C)
TC = 25 °C TC = 100 °C
Pulsed Drain Current
Single Pulse Avalanche Current Single Pulse Avalanche Energya
L = 0.1 m H
Maximum Power Dissipationa
TC = 25 °C
TA = 25 °Cc
Operating Junction and Storage Temperature Range
TJ, Tstg
THERMAL RESISTANCE RATINGS
Parameter Junction-to-Ambient (PCB Mount)c
Junction-to-Case (Drain)
Notes: a. Duty cycle ≤ 1 %. b. See SOA curve for voltage derating. c. When Mounted on 1" square PCB (FR-4 material).
Symbol Rth JA Rth...
