VBN1204N Description
VBN1204N N-Channel 200-V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) 200 0.038 at VGS = 15 V 0.043 at VGS = 10 V ID (A) 45 40 Qg (Typ.) 57 TO-262.
VBN1204N Key Features
- TrenchFET® Power MOSFETS
- 175 °C Junction Temperature
- 100 % Rg and UIS Tested