VBN1603 Description
VBN1603 PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration .VBsemi. N-Channel 60 V (D-S) MOSFET 60 0.0028 0.0040 210 Single.
VBN1603 Key Features
- Halogen-free According to IEC 61249-2-21 Definition
- TrenchFET® Power MOSFET
- Package with Low Thermal Resistance
- 100 % Rg and UIS Tested
- pliant to RoHS Directive 2002/95/EC