VBP112MI75
Key Features
- Very Low VCEsat
- Low turn-off losses
- High speed switching
- Maximum junction temperature 175°C
- Ultra low gate charge (Qg)
- Avalanche energy rated (UIS)
- Part: VBP112MI75
- Description: 1200V Trench and Fieldstop IGBT
- Manufacturer: VBsemi
- Size: 3.22 MB