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VBP112MI75 - 1200V Trench and Fieldstop IGBT

Datasheet Summary

Features

  • Very Low VCEsat.
  • Low turn-off losses.
  • High speed switching.
  • Maximum junction temperature 175°C.
  • Ultra low gate charge (Qg).
  • Avalanche energy rated (UIS).

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Datasheet preview – VBP112MI75

Datasheet Details

Part number VBP112MI75
Manufacturer VBsemi
File Size 3.22 MB
Description 1200V Trench and Fieldstop IGBT
Datasheet download datasheet VBP112MI75 Datasheet
Additional preview pages of the VBP112MI75 datasheet.

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Full PDF Text Transcription

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VBP112MI75 1200V Trench and Fieldstop IGBT www.VBsemi.com PRODUCT SUMMARY VCE (V) IC (A) 1200 150 (TC=25 ) 75 (TC=100 ) VCE sat (V) 1.
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