Datasheet4U Logo Datasheet4U.com

VBP112MI75 - 1200V Trench and Fieldstop IGBT

Key Features

  • Very Low VCEsat.
  • Low turn-off losses.
  • High speed switching.
  • Maximum junction temperature 175°C.
  • Ultra low gate charge (Qg).
  • Avalanche energy rated (UIS).

📥 Download Datasheet

Datasheet Details

Part number VBP112MI75
Manufacturer VBsemi
File Size 3.22 MB
Description 1200V Trench and Fieldstop IGBT
Datasheet download datasheet VBP112MI75 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
VBP104FAS Silicon PIN Photodiode Vishay
VBP104FASR Silicon PIN Photodiode Vishay
VBP104S Silicon PIN Photodiode Vishay
VBP104SR Silicon PIN Photodiode Vishay
VBPW34FAS Silicon PIN Photodiode Vishay

Other Datasheets by VBsemi

Part Number Description
VBP112MC100 N-Channel MOSFET
VBP112MC100-4L N-Channel MOSFET
VBP112MC60 N-Channel MOSFET
VBP1104N N-Channel MOSFET
VBP1106 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
VBP112MI75 1200V Trench and Fieldstop IGBT www.VBsemi.com PRODUCT SUMMARY VCE (V) IC (A) 1200 150 (TC=25 ) 75 (TC=100 ) VCE sat (V) 1.