VBP15R11S - N-Channel Power MOSFET

VBsemi

Key Features

Low figure-of-merit (FOM) Ron x Qg.
Low input capacitance (Ciss).
Reduced switching and conduction losses.
Low gate charge (Qg).
Avalanche energy rated (UIS).

VBP15R11S n-channel power mosfet by VBsemi - Datasheet Preview

Datasheet Details

Part number	VBP15R11S
Manufacturer	VBsemi
File Size	354.29 KB
Description	N-Channel Power MOSFET
Datasheet	VBP15R11S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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VBM15R11S / VBMB15R11S / VBP15R11S www.VBsemi.com N-Channel 500V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 50 6 10 Single 0.