VBP15R50S Description
N-Channel 500 V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 350 85 180 Single 0.080 TO-247 D G S N-Channel MOSFET.
VBP15R50S Key Features
- Low Gate Charge Qg Results in Simple Drive Requirement
- Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
- Fully Characterized Capacitance and Avalanche Voltage and Current
- Low RDS(on)
- pliant to RoHS Directive 2002/95/EC