VBP165I80 Description
VBP165I80 650 V Trench and Fieldstop IGBT .VBsemi. PRODUCT SUMMARY VCE (V) IC (A) 650 160 (TC=25 ) 80 (TC=100 ) VCE sat (V) 1.7 ICM (A) 240 TO-247 Top View.
VBP165I80 Key Features
- Very Low VCEsat
- Low turn-off losses
- High speed switching
- Maximum junction temperature 175°C
- Ultra low gate charge (Qg)
- Avalanche energy rated (UIS)