VBP17R47S Datasheet MOSFET

Manufacturer: VBsemi

Overview: VBP17R47S www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. () at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 750 VGS = 10 V 278 46 76 Single 0.

Datasheet Details

Part number	VBP17R47S
Manufacturer	VBsemi
File Size	259.30 KB
Description	MOSFET
Datasheet	VBP17R47S-VBsemi.pdf

Key Features

Fast body diode MOSFET using E series technology.
Reduced trr, Qrr, and IRRM.
Low figure-of-merit (FOM): Ron x Qg.
Low input capacitance (Ciss).
Low switching losses due to reduced Qrr.
Ultra low gate charge (Qg).
Avalanche energy rated (UIS).

VBP17R47S Distributor & Price

Compare VBP17R47S distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.

More Datasheets from VBsemi

Part Number	Description
VBP1104N	N-Channel MOSFET
VBP1106	N-Channel MOSFET
VBP112MC100	N-Channel MOSFET
VBP112MC100-4L	N-Channel MOSFET
VBP112MC60	N-Channel MOSFET
VBP112MI75	1200V Trench and Fieldstop IGBT
VBP15R11S	N-Channel Power MOSFET
VBP15R20S	N-Channel Power MOSFET
VBP15R50S	N-Channel MOSFET
VBP165I80	650V Trench and Fieldstop IGBT