VBP17R47S Description
PRODUCT SUMMARY VDS (V) at TJ max. (nC) Qgs (nC) Qgd (nC) Configuration 750 VGS = 10 V 278 46 76 Single 0.070 TO-247AC S D G D G S N-Channel MOSFET.
VBP17R47S Key Features
- Fast body diode MOSFET using E series
- Reduced trr, Qrr, and IRRM
- Low figure-of-merit (FOM): Ron x Qg
- Low input capacitance (Ciss)
- Low switching losses due to reduced Qrr
- Ultra low gate charge (Qg)
- Avalanche energy rated (UIS)