VBPB1102N Description
VBPB1102N N-Channel 100-V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 100 0.018 at VGS = 10 V ID (A) 65a TO-3P G D S D (TAB).
VBPB1102N Key Features
- TrenchFET® Power MOSFET
- 175 °C Junction Temperature
- Low Thermal Resistance Package
- 100 % Rg Tested