VBPB112MI25 Description
VBPB112MI25 1200V Trench and Fieldstop IGBT .VBsemi. PRODUCT SUMMARY VCE (V) IC (A) 1200 50 (TC=25 ) 25 (TC=100 ) VCE sat (V) 1.7 ICM (A) 75 TO-3P.
VBPB112MI25 Key Features
- Very Low VCEsat
- Low turn-off losses
- High speed switching
- Maximum junction temperature 175°C
- Ultra low gate charge (Qg)
- Avalanche energy rated (UIS)