VBPB112MI50 Description
VBPB112MI50 1200V Trench and Fieldstop IGBT .VBsemi. PRODUCT SUMMARY VCE (V) IC (A) 1200 100 (TC=25 ) 50 (TC=100 ) VCE sat (V) 1.7 ICM (A) 150 TO-3P Top View.
VBPB112MI50 Key Features
- Very Low VCEsat
- Low turn-off losses
- High speed switching
- Maximum junction temperature 175°C
- Ultra low gate charge (Qg)
- Avalanche energy rated (UIS)