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VBPB165R20S - N-Channel MOSFET

Overview

VBPB165R20S www.VBsemi.com N-Channel 650V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max.

RDS(on) typ.

(Ω) at 25 °C 650 VGS = 10 V 0.

Key Features

  • Low figure-of-merit (FOM) Ron x Qg.
  • Low input capacitance (Ciss).
  • Reduced switching and conduction losses.
  • Ultra low gate charge (Qg).
  • Avalanche energy rated (UIS).