VBPB165R20S Description
N-Channel 650V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. (Ω) at 25 °C 650 VGS = 10 V 0.161 TO-3P TopView D G S N-Channel MOSFET.
VBPB165R20S Key Features
- Low figure-of-merit (FOM) Ron x Qg
- Low input capacitance (Ciss)
- Reduced switching and conduction losses
- Ultra low gate charge (Qg)
- Avalanche energy rated (UIS)