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VBQA1806
www.VBsemi.com
N-Channel 80 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.0048 at VGS = 10 V
ID (A) a 60
Qg (Typ.)
FEATURES • Trench power MOSFET • 100 % Rg and UIS tested
80
0.0050 at VGS = 7.5 V
60
25 nC
0.0064 at VGS = 4.5 V
60
APPLICATIONS
• Primary side switching
D
• Synchronous rectification
• DC/AC inverters
Top View
DFN5X6 Bottom View
PIN1
Top View
1
8
2
7
3
6
4
5
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage Gate-Source Voltage
VDS
80
V
VGS
± 20
TC = 25 °C
60 a
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C TA = 25 °C
ID
60 a 23.
VBQA1806 Datasheet
