VBsemi Electronics VBQF2625
P-Channel MOSFET
| Part No. | VBQF2625 |
|---|---|
| Datasheet | VBQF2625 Download |
| Manufacturer | VBsemi Electronics |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● TrenchFET® power MOSFET● 100 % Rg and UIS tested DFN 3x3 EP Top View Pin 1 Top View 1 8 2 7 3 6 4 5 S G D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current Continuous Source Current (Diode Conduction) a Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation b Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) d, e TC = 25 °C TC = 125 °C L = 0.1 mH TC = 25 °C TC = 125 °C ID IS IDM IAS EAS PD TJ, Tstg LIMIT -60 ± 20 -36 -21 -60 -100 -36 64.8 68 22 -55 to +175 260 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) PCB Mountc SYMBOL RthJA RthJC LIMIT 68 2.2 UNIT °C/W Notes a. Package limited. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" square PCB (FR4 material). d. For DFN3X3, the end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing.
