VBsemi Electronics VBQG2317
The DFN2X2 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing.| Part No. | VBQG2317 |
|---|---|
| Datasheet | VBQG2317 Download |
| Manufacturer | VBsemi Electronics |
| Description | P-Channel 30V MOSFET |
| Buy | Stock & Price |
FEATURES
● Trench Power MOSFET● Thermally Enhanced DFN2X2 Package - Small Footprint Area - Low On-Resistance
APPLICATIONS
● Load Switch, PA Switch, and Battery Switch for Portable Devices S G D P-Channel MOSFETABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS - 30 V VGS ± 12 TC = 25 °C - 10a Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID - 8a - 10b, c TA = 70 °C - 8b, c A Pulsed Drain Current (t = 300 µs) IDM - 30 Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS TC = 25 °C - 10a - 2.5b, c 17 Maximum Power Dissipation TC = 70 °C TA = 25 °C PD 11 3.3b, c W TA = 70 °C 2.1b, c Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TJ, Tstg - 55 to 150 °C 250 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t5s RthJA 28 Steady State RthJC 5.6 38 °C/W 7.5 Notes: a.
