VBR9N2001K Description
VBR9N2001K N-Channel 200 V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 200 VGS = 10 V 0.8 4.8 0.56 1.3 Single TO-92 D 1 G 2 S 3 Top View.
VBR9N2001K Key Features
- Low On-Resistance
- Secondary Breakdown Free
- Low Power/Voltage Driven
- Low Input and Output Leakage
- Excellent Thermal Stability