VBsemi Electronics VBTA1220N
N-Channel MOSFET
| Part No. | VBTA1220N |
|---|---|
| Datasheet | VBTA1220N Download |
| Manufacturer | VBsemi Electronics |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● TrenchFET® power MOSFET● 100 % Rg tested
APPLICATIONS
● Smart phones, tablet PC’s - DC/DC converters - Boost converters - Load switch, OVP switch G1 3D G S2 Top View SABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 300 μs) Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C VDS VGS ID IDM IS PD TJ, Tstg LIMIT 20 ± 12 0.85 0.65 0.7 a, b 0.6 a, b 6 0.4 0.3 0.5 0.3 0.4 a, b 0.3 a, b -55 to +150 260 THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient a, d Maximum Junction-to-Foot (Drain) t ≤ 10 s Steady State Notes a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. Based on TC = 25 °C. d. Maximum under steady state conditions is 360 °C/W.
