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VBTA7322
N-Channel 30 V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
0.023 at VGS = 10 V 30
0.027 at VGS = 4.5 V
ID (A)a, e 3 3
Qg (Typ.) 4.2 nC
SC-75A (6-LEADS)
D1
6D
D2
5D
G3
4S
Top View
FEATURES • Halogen-free According to IEC 61249-2-21
Definition • TrenchFET® Power MOSFET • Low On-Resistance • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC
APPLICATIONS • DC/DC Converters, High Speed Switching
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 300 µs)
VDS
VGS
TC = 25 °C
TC = 70 °C TA = 25 °C
ID
TA = 70 °C
IDM
30
± 20 3e 3e 2.5b, c 2.
VBTA7322 Datasheet
