VBsemi Electronics VBW2625
P-Channel MOSFET
| Part No. | VBW2625 |
|---|---|
| Datasheet | VBW2625 Download |
| Manufacturer | VBsemi Electronics |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● TrenchFET® Power MOSFET● 100 % UIS Tested
APPLICATIONS
● Load Switch S G TO-3P( N ) D P-Channel MOSFETABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current IDM Avalanche Current Pulse Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg Limit - 60 ± 25 - 53a - 46.8 -9.2b - 8.1b - 200 - 45 101 69a 2.1b 104.2a 66.7a 3.1b 2b - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb Maximum Junction-to-Case Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. Steady State Steady State Symbol RthJA RthJC Typical 33 0.98 Maximum 40 1.2 Unit V A mJ A W °C Unit °C/W 1 VBW2625 SP...
