VBsemi Electronics VBZ2302
N-Channel MOSFET
| Part No. | VBZ2302 |
|---|---|
| Datasheet | VBZ2302 Download |
| Manufacturer | VBsemi Electronics |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Halogen-free According to IEC 61249-2-21 Definition● TrenchFET® Power MOSFET
● 100 % Rg Tested
● Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
● Load Switching for Portable Devices● DC/DC Converter TO-236 (SOT-23) G1 S2 3D Top View
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted) Parameter Symbol 5s Steady State Unit Drain-Source Voltage Gate-Source Voltage VDS 20 V VGS ±8 Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current (t = 300 µs)b TA = 25 °C TA = 70 °C ID 2.9 2.6 2.3 2.1 A IDM 10 Continuous Source Current (Diode Conduction)a IS 0.72 0.6 Power Dissipationa TA = 25 °C TA = 70 °C PD 0.86 0.71 0.55 0.46 W Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t≤5s Steady State Maximum Junction-to-Foot Steady State Notes: a. Surface mounted on 1" x 1" FR4 board. b. Pulse width limited by maximum junction temperature. Symbol RthJA RthJF Typical 120 140 62 Maximu...
