VBZF4N60 Key Features
- Ultra Low Gate Charge
- Reduced Gate Drive Requirement
- Enhanced 30 V, VGS Rating
- Reduced Ciss, Coss, Crss
- Extremely High Frequency Operation
- Repetitive Avalanche Rated
- pliant to RoHS Directive 2002/95/EC
- Part: VBZF4N60
- Manufacturer: VBsemi
- Size: 257.48 KB
Related VBsemi Datasheets
| Part Number | Description |
|---|---|
| VBZFB20P06 | P-Channel MOSFET |
| VBZFB40N06 | N-Channel MOSFET |
| VBZFB40N10 | N-Channel MOSFET |
| VBZFB60N03 | N-Channel MOSFET |
| VBZ2300 | N-Channel MOSFET |
VBZF4N60 Description
VBZF4N60 N-Channel 600V (D-S) Power MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 600 VGS = 10 V 2.2 39 10 19 Single.