VBZFB40N10 Description
VBZFB40N10 N-Channel 100 V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) 100 RDS(on) () 0.036 at VGS= 10 V ID (A) 35 TO-251.
VBZFB40N10 Key Features
- TrenchFET® Power MOSFET
- 175 °C Junction Temperature
- PWM Optimized
- 100 % Rg Tested
- pliant to RoHS Directive 2002/95/EC