VBsemi Electronics VBZM40P06
P-Channel 60V (D-S) MOSFET
| Part No. | VBZM40P06 |
|---|---|
| Datasheet | VBZM40P06 Download |
| Manufacturer | VBsemi Electronics |
| Description | P-Channel 60V (D-S) MOSFET |
| Buy | Stock & Price |
FEATURES
● Halogen-free According to IEC 61249-2-21 Definition● TrenchFET® Power MOSFET
● 100 % Rg and UIS Tested
● Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
● Power Switch● Load Switch in High Current
APPLICATIONS
● DC/DC Converters GD S Top View D P-Channel MOSFETABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C ID Pulsed Drain Current (t = 300 µs) IDM Avalanche Current IAS Single Avalanche Energya L = 0.1 mH EAS Maximum Power Dissipationa TC = 25 °C TA = 25 °Cc PD Operating Junction and Storage Temperature Range TJ, Tstg Limit - 60 ± 20 - 30 - 29 - 100 - 32 51 41.7b 2.1 - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Mount)c Junction-to-Case (Drain) Notes: a. Duty cycle 1 %. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR-4 material). Symbol RthJA RthJC Limit 60 3 Unit V A mJ W...
