VBZM5N50 Description
VBZM5N50 Power MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 1.2 39 10 19 Single.
VBZM5N50 Key Features
- Ultra Low Gate Charge
- Reduced Gate Drive Requirement
- Enhanced 30 V, VGS Rating
- Reduced Ciss, Coss, Crss
- Extremely High Frequency Operation
- Repetitive Avalanche Rated
- pliant to RoHS Directive 2002/95/EC