VBZM7N60 Overview
VBZM7N60 / VBZMB7N60 /$IBOOFM07 %4 Power MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max.
VBZM7N60 Key Features
- Low figure-of-merit (FOM) Ron x Qg
- Low input capacitance (Ciss)
- Reduced switching and conduction losses
- Ultra low gate charge (Qg)
- Avalanche energy rated (UIS)