VBZR2N7000 Overview
VBZR2N7000 N-Channel 60-V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 2 at VGS = 10 V ID (mA) 300 TO-92 D 1 G 2 S 3 Top View.
VBZR2N7000 Key Features
- Halogen-free According to IEC 61249-2-21
- Low On-Resistance: 2 Ω
- Low Threshold: 2 V (typ.)
- Low Input Capacitance: 25 pF
- Fast Switching Speed: 25 ns
- Low Input and Output Leakage
- TrenchFET® Power MOSFET
- 1200V ESD Protection
- pliant to RoHS Directive 2002/95/EC
- Low Offset Voltage