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VBZR2N7000
N-Channel 60-V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
60
2 at VGS = 10 V
ID (mA) 300
TO-92
D
1
G
2
S
3
Top View
FEATURES • Halogen-free According to IEC 61249-2-21
Definition • Low On-Resistance: 2 Ω • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF • Fast Switching Speed: 25 ns • Low Input and Output Leakage • TrenchFET® Power MOSFET • 1200V ESD Protection • Compliant to RoHS Directive 2002/95/EC
BENEFITS • Low Offset Voltage • Low-Voltage Operation • Easily Driven Without Buffer • High-Speed Circuits • Low Error Voltage
APPLICATIONS • Direct Logic-Level Interface: TTL/CMOS • Drivers: Relays, Solenoids, Lamps, Hammers, Display,
Memories, Transistors, etc.
VBZR2N7000 Datasheet
