VS150N08BT
Overview
- Trench power MOSFET
- Maximum 175 °C junction temperature
- Very low Qgd reduces power loss from passing through Vplateau
- 100 % Rg and UIS tested Top View S
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| VS150N08BTD | Vanguard Semiconductor | N-Channel Advanced Power MOSFET |
| VS150N08BT | Vanguard Semiconductor | N-Channel Advanced Power MOSFET |
| VS150N08BN | Vanguard Semiconductor | N-Channel Advanced Power MOSFET |
| VS150N08AT | Vanguard Semiconductor | N-Channel Advanced Power MOSFET |