VS150N08BT Description
VS150N08BT-VB VS150N08BT-VB Datasheet N-Channel 80 V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) (Ω) MAX. 80 0.0028 at VGS = 10 V 0.0030 at VGS = 7.5 V ID (A) 195 185 TO-220AB Qg (TYP.).
VS150N08BT Key Features
- Trench power MOSFET
- Maximum 175 °C junction temperature
- Very low Qgd reduces power loss from passing
- 100 % Rg and UIS tested