VBsemi Electronics VS3606AP
N-Channel 30V MOSFET
| Part No. | VS3606AP |
|---|---|
| Datasheet | VS3606AP Download |
| Manufacturer | VBsemi Electronics |
| Description | N-Channel 30V MOSFET |
| Buy | Stock & Price |
FEATURES
● Trench Power MOSFET● 100 % Rg and UIS Tested
APPLICATIONS
● OR-ing● Server Top View DFN5X6 Bottom View Top View 1 8 2 7 3 6 4 5 D G PIN1 S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 175 °C) TC = 70 °C ID TA = 25 °C TA = 70 °C Pulsed Drain Current IDM Avalanche Current Pulse Single Pulse Avalanche Energy IAS L = 0.1 mH EAS Continuous Source-Drain Diode Current TC = 25 °C IS TA = 25 °C TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg Limit 30 ± 20 160a, e 90e 33b, c 29.8b, c 300 36 64.8 90a, e 3.13b, c 250a 175 3.75b, c 2.63b, c - 55 to 175 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d t 10 s Symbol RthJA Maximum Junction-to-Case Steady State RthJC Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d.
