VS3622DP Key Features
- Halogen-free According to IEC 61249-2-21
- TrenchFET® Power MOSFET
- 100 % UIS Tested
- 100 % Rg Tested
- pliant to RoHS Directive 2002/95/EC
- Part: VS3622DP
- Manufacturer: VBsemi
- Size: 310.79 KB
Other VS3622DP Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Vanguard Semiconductor |
VS3622DP | Dual N-Channel Advanced Power MOSFET |
|
Vanguard Semiconductor |
VS3622DP2 | Dual N-Channel Advanced Power MOSFET |
|
Vanguard Semiconductor |
VS3622DE | 30V/35A Dual N-Channel Advanced Power MOSFET |
|
Vanguard Semiconductor |
VS3622DS | Dual N-Channel Advanced Power MOSFET |
|
Vanguard Semiconductor |
VS3622AA | N-Channel Advanced Power MOSFET |
VS3622DP Description
VS3622DP-VB VS3622DP-VB Datasheet Dual N-Channel 30V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0034 at VGS = 10 V 30 0.0043 at VGS = 4.5 V ID (A) 60 55 Qg (Typ.) 17.