VBsemi Electronics VS3622DP
Dual N-Channel 30V MOSFET
| Part No. | VS3622DP |
|---|---|
| Datasheet | VS3622DP Download |
| Manufacturer | VBsemi Electronics |
| Description | Dual N-Channel 30V MOSFET |
| Buy | Stock & Price |
FEATURES
● Halogen-free According to IEC 61249-2-21 Definition● TrenchFET® Power MOSFET
● 100 % UIS Tested
● 100 % Rg Tested
● Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
● Set Top Box● Low Current DC/DC PHASE Top View Bottom View
ABSOLUTE MAXIMUM RATINGS
TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limit 30 ± 20 60a 50 25.2b, c 22.2b, c 200 2.25 1.48b, c 5 1.25 56 15 2.18b, c 1.34b, c - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, c, d Maximum Junction-to-Foot (Drain) t ≤ 10 s Steady State Notes: a. Package limited, TC = 25 °C. b.
